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| SUP/SUB65P06-20 Vishay Siliconix P-Channel 60-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) -60 rDS(on) (W) 0.020 ID (A) -65a TO-220AB S TO-263 G DRAIN connected to TAB GDS Top View SUP65P06-20 G DS D Top View SUB65P06-20 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Power Dissipation Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C (TO-220AB and TO-263) TA = 125_C (TO-263)c PD TJ, Tstg TC = 25_C TC = 125_C ID IDM IAR EAR Symbol VGS Limit "20 -65a -39 -200 -60 180 250d 3.7 -55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter PCB Mount (TO-263)c Junction-to-Ambient Junction-to-Case Notes: a. Package limited. b. Duty cycle v 1%. c. When mounted on 1" square PCB (FR-4 material). d. See SOA curve for voltage derating. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70289 S-05111--Rev. C, 10-Dec-01 www.vishay.com Free Air (TO-220AB) Symbol RthJA RthJA RthJC Limit 40 62.5 0.6 Unit _C/W 2-1 SUP/SUB65P06-20 Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = -250 mA VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "20 V VDS = -60 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = -60 V, VGS = 0 V, TJ = 125_C VDS = -60 V, VGS = 0 V, TJ = 175_C On-State Drain Currenta ID(on) VDS = -5 V, VGS = -10 V VGS = -10 V, ID = -30 A Drain-Source On-State Resistancea rDS(on) VGS = -10 V, ID = -30 A, TJ = 125_C VGS = -10 V, ID = -30 A, TJ = 175_C Forward Transconductancea gfs VDS = -15 V, ID = -30 A 25 -120 0.017 0.020 0.033 0.042 S W -60 -2.0 -3.0 -4.0 "100 -1 -50 -150 A m mA V nA Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reversen Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Ciss Coss Crss Qg Qgs Qgd td(on) tr Timec td(off) tf VDD = -30 V, RL = 0.47 W ID ] -65 A, VGEN = -10 V, RG = 2.5 W VDS = -30 V, VGS = -10 V, ID = -65 A VGS = 0 V, VDS = -25 V, f = 1 MHz 4500 870 350 85 24 22 15 40 65 30 40 80 120 60 ns 120 nC pF Turn-On Delay Timec Rise Timec Turn-Off Delay Fall Timec Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge Is ISM VSD trr IRM(REC) Qrr IF = -65 A, di/dt = 100 A/ms m IF = -65 A, VGS = 0 V -1.1 70 7 0.245 -65 A -200 -1.4 120 9 0.54 V ns A mC Notes: a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing d. Independent of operating temperature. www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 70289 S-05111--Rev. C, 10-Dec-01 SUP/SUB65P06-20 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 200 VGS = 10, 9, 8 V 7V 160 I D - Drain Current (A) I D - Drain Current (A) 160 25_C 125_C 120 TC = -55_C 200 Transfer Characteristics 120 6V 80 5V 40 4V 0 0 2 4 6 8 10 80 40 0 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transconductance 100 0.030 On-Resistance vs. Drain Current 80 g fs - Transconductance (S) TC = -55_C r DS(on)- On-Resistance ( W ) 0.025 25_C 60 125_C 40 0.020 VGS = 10 V 0.015 VGS = 20 V 0.010 20 0.005 0 0 20 40 60 80 100 0.000 0 20 40 60 80 100 VGS - Gate-to-Source Voltage (V) ID - Drain Current (A) Capacitance 6000 20 Gate Charge V GS - Gate-to-Source Voltage (V) 5000 C - Capacitance (pF) Ciss 16 VDS = 30 V ID = 65 A 4000 12 3000 8 2000 Coss 1000 Crss 4 0 0 10 20 30 40 50 60 0 0 25 50 75 100 125 150 175 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Document Number: 70289 S-05111--Rev. C, 10-Dec-01 www.vishay.com 2-3 SUP/SUB65P06-20 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2.5 VGS = 10 V ID = 30 A r DS(on)- On-Resistance ( W ) (Normalized) 2.0 I S - Source Current (A) TJ = 150_C TJ = 25_C 10 100 Source-Drain Diode Forward Voltage 1.5 1.0 0.5 0.0 -50 1 -25 0 25 50 75 100 125 150 175 0.3 0.3 0.6 0.9 1.2 1.5 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature 80 500 10 ms 100 ms 1 ms 10 10 ms 100 ms dc 1 TC = 25_C Single Pulse Safe Operating Area 100 60 I D - Drain Current (A) I D - Drain Current (A) Limited by rDS(on) 40 20 0 0 25 50 75 100 125 150 175 0.1 0.1 1 10 100 TC - Case Temperature (_C) VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-5 10-4 10-3 10-2 10-1 1 3 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 Document Number: 70289 S-05111--Rev. C, 10-Dec-01 2-4 |
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